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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 1/5 HSD2118J LOW VCE(sat) TRANSISTOR (20V, 5A) Feature * Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A) * Excellent DC Current Gain Characteristic * Complements the HSB1386J TO-252 Structure Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Ratings (TA=25C) * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ..................................................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) ...................................................................................................................... 1 W Total Power Dissipation (TC=25C) .................................................................................................................... 10 W * Maximum Voltages and Currents (TA=25C) VCBO Collector to Base Voltage ........................................................................................................................... 50 V VCEO Collector to Emitter Voltage ........................................................................................................................ 20 V VEBO Emitter to Base Voltage ................................................................................................................................ 6 V IC Collector Current ............................................................................................................................................... 5 A IC Collector Current (Pulse) .................................................................................................................................. 10 A Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *hFE fT Cob Min. 50 20 6 180 Typ. 0.6 150 30 Max. 0.5 0.5 1 620 MHz pF Unit V V V uA uA V IC=50uA IC=1mA IE=50uA VCB=40V VEB=5V IC/IB=4A/0.1A VCE=2V, IC=0.5A VCE=6V, IE=-50mA, f=100MHz VCE=20V, IE=0A, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions Classification of hFE Rank Range R 180-390 E 370-620 HSD2118J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 125 C o Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 2/5 Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=20IB Saturation Voltage (mV) 125 C 100 o 25 C 75 C o o hFE 75 C o hFE @ VCE=2V 10 25 C o 100 1 10 100 1000 10000 1 0.1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=40IB 10000 Saturation Voltage & Collector Current VBE(sat) @ IC=20IB Saturation Voltage (mV) 100 75 C o Saturation Voltage (mV) 75 C 1000 25 C o o 10 125 C o 25 C o 125 C o 1 1 10 100 1000 10000 100 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Capcitance & Reverse-Biased Voltage 1000 12 Power Derating 10 PD(W), Power Dissipation Capacitance (pF) 100 Cob 8 6 10 4 2 1 0.1 1 10 100 0 0 20 40 o 60 80 100 120 140 Reverse Biased Voltage (V) Tc( C), Ambient Temperature HSD2118J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 3/5 Safe Operating Area 10 PT=100mS PT=1mS Collector Current-IC (A) PT=1S 1 0.1 1 10 100 Forward Voltage-VCE (V) HSD2118J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension M A F C G 1 2 3 Date Code Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 4/5 Marking: a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None SD 2118J Control Code Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter N H a5 L a2 Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H L M N a1 a2 a5 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J A B C D a1 E Marking: M F y1 a1 Pb-Free: " . " (Note) H Normal: None Pb Free Mark SD 2118J Control Code Date Code GI y1 y1 Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K a2 y2 H N L a2 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J a1 O DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD2118J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HSD2118J HSMC Product Specification |
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